BSL207SPH6327XTSA1 vs BSS123NH6327XTSA1 比較

詳細並排比較 BSL207SPH6327XTSA1 由 Infineon 與 BSS123NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 ✓ 啟用中
Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ 啟用中

規格比較

參數 BSL207SPH6327XTSA1 BSS123NH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type P-Channel N-Channel, Enhancement Mode
Technology MOSFET (Metal Oxide) —
Drain to Source Voltage (VDS) -20 V —
Continuous Drain Current (ID) at 25C 6 A (Ta) —
Power Dissipation (PD) 2 W (Ta) 500 mW (Ta)
RDS(on) Max @ VGS = -4.5 V [DATA_NEEDED: RDS(on) max @ VGS=-4.5V] —
RDS(on) Max @ VGS = -2.5 V [DATA_NEEDED: RDS(on) max @ VGS=-2.5V] —
Drive Voltage (Max RDS(on), Min RDS(on)) 2.5 V, 4.5 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: typical and max VGS(th)]
封裝 TSOP-6 (PG-TSOP6-6) PG-SOT23 (SOT-23-3)
安裝類型 Surface Mount Surface Mount
工作溫度 -55C to +150C —
Series OptiMOS™ —
Automotive Qualification AEC-Q101 —
RoHS 狀態 Compliant —
腳位數 6 —
Manufacturer — Infineon Technologies
Part Number — BSS123NH6327XTSA1
Part Status — Active
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 190 mA (Ta)
RDS(on) Max — 6 Ω @ VGS = 10 V
Gate-Source Voltage Max (VGS) — ±20 V
工作溫度範圍 — -55 °C to +150 °C (junction)
Qualification — AEC-Q101 (automotive)
RoHS Compliance — Yes (Pb-free lead plating)
MSL 等級 — 1 (per JEDEC J-STD-020)

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