BSP129H6327XTSA1 vs BSP129H6906XTSA1 比較

詳細並排比較 BSP129H6327XTSA1 由 Infineon 與 BSP129H6906XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSP129H6906XTSA1 BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 ✓ 啟用中

規格比較

參數 BSP129H6327XTSA1 BSP129H6906XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel, Depletion Mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) 240 V 240 V
Continuous Drain Current (ID) at TA=25C 350 mA 350 mA
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) —
Power Dissipation (PD) at TA=25C 1.8 W 1.8 W
封裝 PG-SOT223-4 (SOT-223, 3+Tab) PG-SOT223-4 (SOT-223)
安裝類型 Surface Mount Surface Mount
工作溫度 -55 C to +150 C (junction) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] —
dv/dt Ruggedness Yes (rated) —
Automotive Qualification AEC-Q101 qualified —
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
MSL 等級 [DATA_NEEDED: MSL rating] 1 (unlimited floor life)
Process Technology SIPMOS (vertical DMOS) —
Drain Terminal Tab (pin 4) —
Manufacturer — Infineon Technologies
Part Number — BSP129H6906XTSA1
Drain-Source On-Resistance (RDS(on)) — 6 Ohm (max)
Operating Mode — Normally-On (Depletion)
Gate-Source Pinch-Off Voltage — [DATA_NEEDED: VGS(off) typical value]
腳位數 — 3 functional + 1 tab (4 leads)
工作溫度範圍 — [DATA_NEEDED: TJ max]
ESD Protection — Integrated Zener diodes on gate

資料表與資源

瀏覽所有產品 建立 BOM 索取報價