BSP315PH6327XTSA1 vs BSP135H6906XTSA1 比較

詳細並排比較 BSP315PH6327XTSA1 由 Infineon 與 BSP135H6906XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ 啟用中
Infineon
BSP135H6906XTSA1 BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 ✓ 啟用中

規格比較

參數 BSP315PH6327XTSA1 BSP135H6906XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type P-Channel N-Channel Depletion Mode
Technology OptiMOS (enhancement mode) SIPMOS (planar high-voltage)
Drain-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) -1.17 A (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10 V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
工作溫度範圍 -55 C to +150 C (junction) -55C to +150C
封裝 PG-SOT223-4 (SOT-223-3 pinout with exposed tab) PG-SOT223-4 (SOT-223, 3+tab)
安裝類型 Surface Mount Surface Mount
Avalanche Energy Rated Yes (per datasheet) —
Lead-Free / RoHS Yes / Compliant —
MSL 等級 1 (per JEDEC J-STD-020) 1 (unlimited)
Drain-Source Voltage (VDS) Max — 600 V
Continuous Drain Current (ID) at TA=25C — 120 mA
RDS(on) Max at VGS=0V — 45 Ohm
Power Dissipation (PD) Max — 1.8 W
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(off)) — Depletion mode (normally-on)
腳位數 — 4 (3 leads + drain tab)
RoHS 狀態 — Compliant
Automotive Qualification — AEC-Q101 (per datasheets.com parametric record)
Lead-Free — Yes

資料表與資源

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