BSP742RIXUMA1 vs BSD214SNH6327XTSA1 比較

詳細並排比較 BSP742RIXUMA1 由 Infineon 與 BSD214SNH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSD214SNH6327XTSA1 BSD214SNH6327XTSA1 - 20V N-Ch OptiMOS 1.5A | Infineon SOT-363

BSD214SNH6327XTSA1 - 20V N-Ch OptiMOS 1.5A | Infineon SOT-363

BSD214SNH6327XTSA1 ✓ 啟用中

規格比較

參數 BSP742RIXUMA1 BSD214SNH6327XTSA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers MOSFETs
生命週期狀態 啟用中 啟用中
Product Type Smart High-Side Power Switch —
拓撲 1:1 N-Channel High-Side —
Family miniPROFET —
Output Current (Nominal) 400 mA —
RDS(on) Typical at 25°C 250 mΩ —
工作電源電壓 5 V to 34 V —
Load Dump Tolerance 41 V —
Reverse Battery Protection -16 V —
On-State Resistance (max) [DATA_NEEDED: RDS(on) maximum at 25°C] —
電流限制 [DATA_NEEDED: current limit typical value] —
過熱關機 Yes with auto restart —
Overvoltage Protection Yes (including load dump) —
Short Circuit Protection Yes —
Open Load Detection Yes (diagnostic pin) —
Demagnetization of Inductive Loads Yes (internal) —
封裝 PG-DSO-8-6 (SOIC-8, 3.90 mm body) SOT-363 (PG-SOT363-PO), 6-pin
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40 °C to +150 °C -55C to +150C (junction)
MSL 等級 [DATA_NEEDED: MSL rating] 1
RoHS 狀態 Compliant Compliant
FET Type — N-Channel
Technology — MOSFET (Metal Oxide), OptiMOS
Drain-to-Source Voltage (Vdss) — 20 V
Continuous Drain Current (Id) at 25C — 1.5 A
Power Dissipation (Pd) at Ta — 500 mW
Gate Drive Voltage (Rds On rated) — 2.5 V, 4.5 V
Rds On (Max) @ Vgs=4.5V — [DATA_NEEDED: Rds On at Vgs=4.5V]
Rds On (Max) @ Vgs=2.5V — [DATA_NEEDED: Rds On at Vgs=2.5V]
Vgs(th) (typical) — [DATA_NEEDED: Vgs threshold typical]
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
Standard Pack Quantity — 3000 (Tape & Reel)

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