BSS214NH6327XTSA1 vs BSS138NH6327XTSA2 比較

詳細並排比較 BSS214NH6327XTSA1 由 Infineon 與 BSS138NH6327XTSA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ 啟用中
Infineon
BSS138NH6327XTSA2 BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

BSS138NH6327XTSA2 ✓ 啟用中

規格比較

參數 BSS214NH6327XTSA1 BSS138NH6327XTSA2
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Drain-Source Voltage (VDS) 20 V —
Continuous Drain Current (ID) 1.5 A (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
Drain-Source On-Resistance (RDS(on) max) 250 mOhm at VGS = 4.5 V —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max values] —
Gate-Source Voltage (VGS max) ±12 V (recommended) —
Technology OptiMOS 2 (planar N-channel) —
封裝 SOT-23 (PG-SOT23), 3 pins PG-SOT-23 (3-pin)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (junction) [DATA_NEEDED: Tj max and operating range]
Qualification AEC-Q101 (Automotive) —
Lead Finish Pb-free lead plating (matte tin) —
RoHS 狀態 Compliant —
MSL 等級 1 (per JEDEC J-STD-020) —
ESD Protection Yes (gate ESD diode) —
Polarity — N-Channel
Operating Mode — Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) — 60 V
R_DS(on) max @ V_GS=10V — 3.5 ohm
Continuous Drain Current (Ta) — 230 mA
Power Dissipation (Ta) — 360 mW
Gate Threshold V_GS(th) — [DATA_NEEDED: typical V_GS(th) value]
Gate-Source Voltage V_GS max — ±20 V
dv/dt Rated — Yes
無鹵素 — Yes (per IEC 61249-2-21)
RoHS Compliance — Compliant
AEC-Q101 Qualification — Qualified
Lead Plating — Pb-free
Marking Code — [DATA_NEEDED: top-side marking code]
Packaging — Tape and Reel

資料表與資源

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