BSZ017NE2LS5IATMA1 vs BSZ0501NSIATMA1 比較

詳細並排比較 BSZ017NE2LS5IATMA1 由 Infineon 與 BSZ0501NSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSZ017NE2LS5IATMA1 BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8

BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8

BSZ017NE2LS5IATMA1 ✓ 啟用中

規格比較

參數 BSZ017NE2LS5IATMA1 BSZ0501NSIATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity N-Channel —
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (TA) 27 A —
Continuous Drain Current (TC) 40 A —
On-Resistance RDS(on) @ VGS=10V 1.7 mΩ —
On-Resistance Test Current 20 A —
Gate-Source Voltage (VGS) Rating ±16 V —
Gate Threshold Voltage VGS(th) 2 V @ 250 µA —
Total Gate Charge Qg 30 nC @ VGS=10V —
Input Capacitance Ciss 2000 pF @ VDS=12V —
Power Dissipation (TA) 2.1 W —
Power Dissipation (TC) 50 W —
工作接面溫度 -55°C to +150°C —
封裝 PG-TSDSON-8-FL (8-PowerTDFN) PG-TSDSON-8-FL (3.3 x 3.3 mm)
安裝類型 Surface Mount Surface Mount
Series / Family OptiMOS 5 25V —
RoHS 狀態 Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSZ0501NSIATMA1
Product Family — OptiMOS 5 (25V/30V)
FET Type — N-Channel
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) at TA=25C — 25 A
Continuous Drain Current (Id) at TC=25C — 40 A
Power Dissipation (Pd) at TA=25C — 2.1 W
Power Dissipation (Pd) at TC=25C — 50 W
Operating Mode — Enhancement Mode
Configuration — Single with built-in diode
Number of Terminals — 8
JESD-609 Code — e3 (matte tin)
MSL 等級 — [DATA_NEEDED: MSL rating]
Rds(on) at Vgs=10V (typ) — [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
工作溫度範圍 — [DATA_NEEDED: Tj max]

資料表與資源

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