BSZ0901NSIATMA1 vs BSC028N06NSTATMA1 比較

詳細並排比較 BSZ0901NSIATMA1 由 Infineon 與 BSC028N06NSTATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC028N06NSTATMA1 BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon

BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon

BSC028N06NSTATMA1 ✓ 啟用中

規格比較

參數 BSZ0901NSIATMA1 BSC028N06NSTATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0901NSIATMA1 —
Series OptiMOS 25V OptiMOS 5
Technology OptiMOS trench N-channel MOSFET MOSFET N-Channel (OptiMOS 5)
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) at Ta=25C 25 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 69 W —
封裝 PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) PG-TDSON-8-7 (SuperSO8, 5x6 mm)
安裝類型 Surface Mount Surface Mount
腳位數 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max @ VGS=10V] —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) max @ VGS=4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
工作溫度範圍 -55 C to +150 C (typical MOSFET range) —
Packaging Tape & Reel (ATMA1 suffix = 13-inch reel) —
RoHS 狀態 Compliant Compliant
Part Number Base — BSC028N06NS
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.5 V to 3.5 V
Total Gate Charge Qg — 37 nC @ VGS=10V
Input Capacitance Ciss — 3000 nC [DATA_NEEDED: confirm exact pF from datasheet]
Output Capacitance Coss — 825 pF
Reverse Transfer Capacitance Crss — 56 pF
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 100 W
工作接面溫度 — -55C to +175C
無鹵素 — Yes
MSL 等級 — 1
AEC-Q101 Automotive Qualified — [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ]

資料表與資源

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