BTS3110NHUMA1 vs BSP315PH6327XTSA1 比較

詳細並排比較 BTS3110NHUMA1 由 Infineon 與 BSP315PH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BTS3110NHUMA1 BTS3110NHUMA1 - 42V 1.4A Smart Low-Side Switch | Infineon

BTS3110NHUMA1 - 42V 1.4A Smart Low-Side Switch | Infineon

BTS3110NHUMA1 ✓ 啟用中
Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ 啟用中

規格比較

參數 BTS3110NHUMA1 BSP315PH6327XTSA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers MOSFETs
生命週期狀態 啟用中 啟用中
Product Type Smart Low-Side Power Switch —
Family Classic HITFET —
Number of Channels 1 —
Switch Type N-Channel (1:1) —
Maximum Drain-to-Source Voltage (VDS max) 42 V —
Continuous Drain Current 1.4 A —
On-Resistance (RDS(on) typ) 200 mOhm —
Input Logic Compatibility TTL / CMOS (3.3 V and 5 V) —
On-State Input Voltage (VIH) [DATA_NEEDED: VIH value] —
Off-State Input Voltage (VIL) [DATA_NEEDED: VIL value] —
Status Flag Output Open-drain diagnostic output —
Protection Features ESD, thermal shutdown, over-load current limit —
工作溫度範圍 -40 C to +150 C -55 C to +150 C (junction)
封裝 PG-SOT223-4 (SOT-223-4) PG-SOT223-4 (SOT-223-3 pinout with exposed tab)
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
RoHS 狀態 Compliant —
Automotive Qualified Yes - 12 V automotive applications —
FET Type — P-Channel
Technology — OptiMOS (enhancement mode)
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -1.17 A (Ta)
Power Dissipation (PD) — 1.8 W (Ta)
Gate-Source Voltage (VGS) — ±20 V (max)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10 V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Avalanche Energy Rated — Yes (per datasheet)
Lead-Free / RoHS — Yes / Compliant

資料表與資源

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