BTS621L1E3128ABUMA1 vs MC33289DWR2 比較

詳細並排比較 BTS621L1E3128ABUMA1 由 Infineon 與 MC33289DWR2 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MC33289DWR2 MC33289DWR2 - Dual High-Side Switch 40mOhm 27V | NXP SOIC-20

MC33289DWR2 - Dual High-Side Switch 40mOhm 27V | NXP SOIC-20

MC33289DWR2 ✓ 啟用中

規格比較

參數 BTS621L1E3128ABUMA1 MC33289DWR2
品牌 Infineon NXP Semiconductors
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Dual-channel smart high-side power switch (PROFET) Dual High-Side Switch (DHSS)
Number of Channels 2 (dual high-side, 1:1) —
FET Topology N-Channel vertical power MOSFET with charge pump —
On-State Resistance Rds(on) 8 mΩ typical per channel —
Nominal Operating Voltage 12 V (automotive bus) —
Maximum Supply Voltage 24 V (load-dump survivable) —
Continuous Load Current 4.4 A per channel —
工作溫度範圍 -40 °C to +150 °C junction —
封裝 PG-TO263-7-2 (D2PAK-7, exposed tab) 20-SOIC (0.295 inch, 7.50 mm width)
安裝類型 Surface Mount Surface Mount
Input Logic Compatibility CMOS-compatible, ground-referenced —
Diagnostic Feedback Yes - open-load and overtemperature reporting —
Embedded Protection Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery —
Technology Smart SIPMOS (monolithic) —
RoHS / Lead-Free Compliant (Pb-free) —
拓撲 — 2 x High-Side N-MOSFET switches
On-State Resistance (RDSon) — 40 mOhm (per channel)
Supply Voltage Range (VCC) — 6 V to 27 V
Maximum Transient Voltage — 40 V (load dump tolerant)
Output Current per Channel — [DATA_NEEDED: continuous current rating per channel]
輸出數量 — 2
Input Compatibility — TTL/CMOS compatible logic inputs
Fault Protection — Current limit, thermal shutdown, open-load detect
Status Feedback — Yes (fault flag output)
工作溫度 — -40C to +125C (automotive grade)
MSL 等級 — [DATA_NEEDED: MSL rating]
RoHS 狀態 — [DATA_NEEDED: RoHS status]
Automotive Grade — Yes (AEC-Q100 qualified)
Charge Pump — Integrated (gate drive)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價