DS1249AB-70IND vs DS1249AB-70IND+ 比較
詳細並排比較 DS1249AB-70IND 由 Analog Devices 與 DS1249AB-70IND+ 由 Analog Devices. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | DS1249AB-70IND | DS1249AB-70IND+ |
|---|---|---|
| 品牌 | Analog Devices | Analog Devices |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NVSRAM (Non-Volatile SRAM) | NVSRAM (Non-Volatile SRAM) |
| 記憶體容量 | 2 Mbit (262,144 x 8) | 2 Mbit (2,097,152 bits) |
| 組織 | 262,144 words x 8 bits | 256K x 8 |
| Access Time | 70 ns | 70 ns (max) |
| 介面 | Parallel | Parallel |
| Write Cycle Endurance | Unlimited writes | — |
| Data Retention | 10 years minimum (no external power) | 10 years (typical, with internal lithium cell) |
| Backup Mechanism | Internal lithium energy cell + VCC monitor | — |
| Write Protection | Automatic on VCC out-of-tolerance | Automatic on VCC out-of-tolerance |
| Operating Voltage (VCC) | 5 V (typical NVSRAM range) | — |
| 工作溫度 | -40C to +85C (industrial, -IND suffix) | — |
| 封裝 | 32-EDIP (Extended DIP module, 0.600 inch / 15.24 mm) | — |
| 安裝類型 | Through-Hole (DIP module) | Through-Hole (DIP module with socket) |
| RoHS 狀態 | Contains lithium - subject to special handling rules | Compliant (per Maxim Integrated product page) |
| Technology | Low-power CMOS | — |
| Write Cycle Time | — | 70 ns (word write, no write delay) |
| Supply Voltage (VCC) | — | 5 V ±10% (typical 4.5 V to 5.5 V) |
| 工作溫度範圍 | — | -40 °C to +85 °C (industrial, -IND suffix) |
| 封裝 / 外殼 | — | 32-EDIP (Extended DIP, 0.600 in / 15.24 mm) |
| 腳位數 | — | 32 |
| Built-in Battery | — | Yes (internal lithium energy source) |
| Endurance | — | Unlimited SRAM read/write cycles |
| Shipping Regulation | — | UN3481 PI970 (lithium battery - air/sea per IATA) |
| Lead-Free / Halogen-Free | — | Lead-free (RoHS compliant) |