EDB2432B4MA-1DAUT-F-D vs EDB5432BEBH-1DAUT-F-D 比較

詳細並排比較 EDB2432B4MA-1DAUT-F-D 由 Micron Technology 與 EDB5432BEBH-1DAUT-F-D 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
EDB2432B4MA-1DAUT-F-D EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron

EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron

EDB2432B4MA-1DAUT-F-D ✓ 啟用中
Micron Technology
EDB5432BEBH-1DAUT-F-D EDB5432BEBH-1DAUT-F-D - 512Mb LPDDR2 DRAM 533MHz | Micron

EDB5432BEBH-1DAUT-F-D - 512Mb LPDDR2 DRAM 533MHz | Micron

EDB5432BEBH-1DAUT-F-D ✓ 啟用中

規格比較

參數 EDB2432B4MA-1DAUT-F-D EDB5432BEBH-1DAUT-F-D
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 Volatile Memory - DRAM Mobile LPDDR2 SDRAM
Technology SDRAM - Mobile LPDDR2 —
記憶體容量 2 Gbit (64M x 32) 512 Mbit
組織 64M x 32 16M x 32
Clock Frequency 533 MHz 533 MHz
介面 Parallel Parallel
封裝 134-VFBGA (10 x 11.5 mm) 134-VFBGA (10 x 11.5 mm)
Package Construction DDP (Double-Die Package) —
工作溫度 -40C to +125C (Automotive) [DATA_NEEDED: operating temperature range]
安裝類型 Surface Mount Surface Mount
Marking Code D9WVG —
Part Status Active —
Lead-Free Status Lead free (-F suffix) —
Halogen-Free Status Halogen free (-F suffix) —
供應電壓 [DATA_NEEDED: VDD/VDDQ supply voltage] —
Write Cycle Time - Word, Page [DATA_NEEDED: write cycle time] —
Supply Voltage Range — 1.14 V to 1.95 V
Core Voltage — 1.2 V (typical, LPDDR2)
Temperature Grade — Automotive
Terminals — 134 balls
Terminal Form — Ball (VFBGA)
Package Shape — Rectangular
RoHS Code — Yes (D suffix, lead-free)
Part Life Cycle Code — Active
Access Time / CAS Latency — [DATA_NEEDED: CAS latency]
Standard Qty per Reel/Tray — [DATA_NEEDED: packaging standard quantity]

資料表與資源

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