EP3SE50F484I4G vs EP3SE50F484I4LN 比較
詳細並排比較 EP3SE50F484I4G 由 Intel 與 EP3SE50F484I4LN 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP3SE50F484I4G | EP3SE50F484I4LN |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | NRND | Obsolete |
| Family | Stratix III E | Stratix III E |
| Logic Elements | 47,500 LE | — |
| Adaptive Logic Modules (ALMs) | 19,000 ALM | — |
| Embedded Memory | 5.49 Mbit | 5.76 Mbit (estimated from 47.5K LE family) |
| User I/Os | 296 I/O | — |
| 工作電源電壓 | 1.1 V (core) | — |
| 工作溫度 | -40C to +100C (industrial) | -40C to +100C (industrial I4 grade) |
| Speed Grade | 4 | — |
| 安裝方式 | SMD/SMT | — |
| 封裝 | 484-Ball FCBGA (FineLine BGA) | 484-ball FBGA (FineLine BGA) |
| Process Technology | 40 nm low-power CMOS | — |
| RoHS 狀態 | Compliant (lead-free 'G' suffix) | Compliant (LN suffix indicates lead-free) |
| MSL 等級 | [DATA_NEEDED: MSL level] | — |
| Transceiver Count | Up to 12 (Stratix III E family) | — |
| External Memory Support | DDR3, DDR2, QDR II/II+ | — |
| Logic Elements (LE) | — | 47,500 |
| Logic Array Blocks (LABs) | — | 1,900 |
| User I/O Count | — | 296 |
| Process Node | — | 65 nm |
| Core Voltage (VCCINT) | — | 0.9 V |
| Auxiliary Voltage (VCCAUX) | — | 1.1 V |
| I/O Voltage (VCCIO) | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.0 V (bank-dependent) |
| Pin/Pitch | — | 484 balls, 1.0 mm pitch |
| Configuration | — | SRAM-based (external flash/EPCS required) |
| Lead-Free | — | Yes (LF / N suffix indicates lead-free) |
| Transceivers | — | 0 (F484 package does not include transceiver banks) |
| PLL Count | — | Up to 12 (estimated for Stratix III E family) |
| DSP Blocks (18x18 Multipliers) | — | [DATA_NEEDED: DSP block count] |
| Design Tool | — | Quartus II (legacy, support via Altera/Intel subscription) |