EP3SE80F1152C4LN vs EP3SE80F1152I4N 比較
詳細並排比較 EP3SE80F1152C4LN 由 Intel 與 EP3SE80F1152I4N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP3SE80F1152C4LN | EP3SE80F1152I4N |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 啟用中 | 最後購買 |
| Series | Stratix III E | Stratix III E |
| Logic Elements (LE) | 80,000 | — |
| LABs / CLBs | 3200 | — |
| Embedded Memory (bits) | 6,843,392 | — |
| Total RAM Bits | 6,843,392 | — |
| User I/O (per datasheet) | 744 | — |
| User I/O (JAK comparison) | 488 (alternate listing) | — |
| Operating Frequency (max) | 717 MHz | — |
| Number of GPIOs | 744 | — |
| 供應電壓 | 0.9 V to 1.1 V core (with 2.5 V / 3.0 V aux) | — |
| Process Technology | CMOS | 65 nm CMOS |
| 封裝 | 1152-BBGA, FCBGA (FBGA-1152) | 1152-BBGA, FCBGA (flip-chip) |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| Lead Free | Yes | — |
| 工作溫度 | [DATA_NEEDED: operating temperature grade] | — |
| Logic Elements | — | 80,000 |
| Embedded Memory Bits | — | 6,843,392 bits |
| User I/O Count | — | 744 |
| Core Voltage | — | 1.1 V |
| Maximum Internal Frequency | — | 450 MHz |
| Operating Temperature Grade | — | Industrial (-40C to +100C junction) |
| Speed Grade | — | I4 |
| 記憶體類型 | — | SRAM-based configuration |
| Configuration Method | — | JTAG / Passive Serial / Fast Passive Parallel (IEEE 1149.1 BST) |
| I/O Standards Supported | — | LVDS, LVCMOS, SSTL, HSTL, PCI, PCI-X |
| RoHS 狀態 | — | Compliant |
| MSL 等級 | — | 3 (per JEDEC J-STD-020) |