EP4CE75F23I7N vs EP4CE115F23I7N 比較
詳細並排比較 EP4CE75F23I7N 由 Intel 與 EP4CE115F23I7N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP4CE75F23I7N | EP4CE115F23I7N |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Product Line | Cyclone IV E | — |
| Family | Cyclone IV E (EP4CE) | EP4CE115 (F23 package) |
| Logic Elements (LEs) | 75,408 | — |
| Logic Array Blocks (LABs) | 4,713 | 7,180 |
| Embedded Memory Bits | 2,810,880 bits (312 M9K blocks) | 3,981,312 bits |
| Distributed RAM Bits | 200 Kbits | — |
| Embedded 18x18 Multipliers | 15 | — |
| PLLs | 4 | — |
| Global Clocks | [DATA_NEEDED: global clock network count] | — |
| Maximum User I/Os | 292 | 280 |
| Core Voltage (VCCINT) | 1.2 V nominal | — |
| I/O Voltage (VCCIO) | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank) | — |
| Process Technology | 60 nm low-power CMOS | 60 nm low-power CMOS (TSMC) |
| 封裝 | 484-ball FBGA (F23, 23 mm body, 1.0 mm pitch) | 484-FBGA (F23) 23x23 mm, 1.0 mm pitch |
| Operating Temperature Grade | Industrial (I7: -40C to +100C Tj) | — |
| Configuration Modes | Active Serial (AS), Passive Serial (PS), JTAG | — |
| External Memory Interfaces | DDR / DDR2 SDRAM, QDRII SRAM | — |
| Design Software | Quartus II / Quartus Prime | — |
| RoHS 狀態 | Compliant | Compliant |
| Series | — | Cyclone IV E |
| Logic Elements (LE) | — | 114,480 |
| Number of PLLs | — | 4 |
| 18x18 Hardware Multipliers | — | 266 |
| Core Voltage | — | 1.0 V / 1.2 V |
| I/O Voltage Banks | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| 工作溫度 | — | -40C to +100C (Industrial) |
| 安裝類型 | — | Surface Mount |
| Configuration Method | — | JTAG, Active Serial, Active Parallel |
| MSL 等級 | — | 3 |
| Lead-Free | — | Yes |