EPF10K250EBI600-3 vs EPF10K200EBI600-2 比較
詳細並排比較 EPF10K250EBI600-3 由 Intel 與 EPF10K200EBI600-2 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Intel
EPF10K200EBI600-2 - FLEX 10KE FPGA 200K Gates 9984 LEs BGA-600 | Intel
EPF10K200EBI600-2 Obsolete規格比較
| 參數 | EPF10K250EBI600-3 | EPF10K200EBI600-2 |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 最後購買 | Obsolete |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements | 12,160 | — |
| Typical Gate Count | 250,000 system gates | — |
| Embedded System Blocks (ESBs) | 12 | — |
| Maximum User I/O | 470 | — |
| Dedicated Inputs | 4 | — |
| PLLs | 4 | — |
| On-chip RAM | Up to 40 Kbits | — |
| 封裝 | 600-ball BGA (HBGA) | BGA-600, 45 x 45 mm, 1.27 mm pitch |
| Ball Pitch | 1.93 mm | — |
| Core Voltage | 2.3 V (FLEX 10KE standard) [DATA_NEEDED: confirm exact VCCINT] | — |
| 工作溫度 | Industrial, 0C to +85C [DATA_NEEDED: confirm -40C to +85C range] | 0 C to 70 C (commercial) |
| Speed Grade | -3 (fastest) | — |
| Process Technology | 0.22 µm CMOS, 4-layer metal | — |
| Configuration Method | SRAM, requires external configuration device (EPC series) | JTAG / ByteBlaster (SRAM configuration) |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| RoHS 狀態 | Not specified (SnPb / tin-lead finish per legacy distributor listing) | Compliant (lead-free package) |
| Lead-free | no (legacy tin-lead per distributor description) | — |
| System Gates | — | 200,000 |
| Logic Elements (LEs) | — | 9,984 |
| Logic Array Blocks (LABs) | — | 1,248 |
| Embedded RAM | — | 98,304 bits |
| Embedded Array Blocks (EABs) | — | 12 (typical for this density) |
| User I/O Pins | — | 470 |
| Supply Voltage (VCCINT) | — | 2.5 V |
| Propagation Delay | — | 0.4 ns (per -2 speed grade) |
| Logic Family | — | CMOS, SRAM-based |