H58G66CK8BX147N vs H58G56AK6QX032 比較
詳細並排比較 H58G66CK8BX147N 由 SK hynix 與 H58G56AK6QX032 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H58G66CK8BX147N | H58G56AK6QX032 |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | LPDDR5X SDRAM | LPDDR5 SDRAM (DRAM) |
| Density | 64 Gbit (8 GB) | 32 Gbit (4 GB) |
| 組織 | x8 (single channel) | 512M x64 |
| Maximum Data Rate | 8533 Mbps | — |
| Supply Voltage Domain | 0.5 V to 1.8 V | — |
| Core Voltage Class | 1.05 V (LPDDR5/LPDDR5X class) | — |
| 封裝 | 315-ball FBGA | 315-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| Standard Compliance | JEDEC-compliant single-channel SDRAM (per SK hynix 315-ball FBGA specification) | — |
| 介面 | LPDDR5/LPDDR5X protocol | — |
| Channel Configuration | Single channel (x8 or x16 capable family) | — |
| Power Management | Dynamic voltage and frequency scaling (DVFSC/DVFSQ) | — |
| Application Domain | Smartphone, AI edge, server-class mobile computing | Automotive / Industrial / Computing |
| 工作溫度 | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: Operating Temperature Range] |
| Refresh Scheme | LPDDR5 per-bank / all-bank refresh | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS Status] |
| 資料速率 | — | 6400 Mbps/pin |
| Core Supply Voltage (VDD) | — | 1.05 V |
| I/O Supply Voltage (VDDQ) | — | 0.5 V |
| Interface Supply (VDD2) | — | 1.8 V |
| Bus Width | — | 64-bit (x64) |
| Peak Bandwidth (per device) | — | 51.2 GB/s |
| Grade | — | Automotive |
| Generation | — | LPDDR5 (JEDEC LPDDR5 standard) |
| MSL 等級 | — | [DATA_NEEDED: Moisture Sensitivity Level] |