H5AN8G4NAFR-PBC vs H5AN8G4NAFR-UHC 比較

詳細並排比較 H5AN8G4NAFR-PBC 由 SK hynix 與 H5AN8G4NAFR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN8G4NAFR-PBC H5AN8G4NAFR-PBC - 8Gb DDR4 SDRAM 1.2V | SK hynix

H5AN8G4NAFR-PBC - 8Gb DDR4 SDRAM 1.2V | SK hynix

H5AN8G4NAFR-PBC ✓ 啟用中
SK hynix
H5AN8G4NAFR-UHC H5AN8G4NAFR-UHC - 8Gb DDR4 SDRAM 1.2V | SK Hynix

H5AN8G4NAFR-UHC - 8Gb DDR4 SDRAM 1.2V | SK Hynix

H5AN8G4NAFR-UHC ✓ 啟用中

規格比較

參數 H5AN8G4NAFR-PBC H5AN8G4NAFR-UHC
品牌 SK hynix SK hynix
類別 DRAM Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM (CMOS)
Density 8 Gb 8 Gbit
組織 2Gb x 4 2G x4
Interface Voltage (VDD/VDDQ) 1.2 V +/- 0.06 V —
Wordline Pump Voltage (VPP) 2.5 V (+0.25/-0.125 V) —
Speed Bins (per datasheet) DDR4-1600 / 1866 / 2133 / 2400 (DLL ON) —
Bank Groups 4 (BG0-BG1) —
Banks 16 (4 bank groups x 4 banks) —
Row Address A0-A16 (17 bits) —
封裝 78-ball FBGA 78-ball FBGA
安裝類型 Surface Mount Surface Mount
Technology CMOS —
Lead-Free / Halogen-Free Yes (RoHS Compliant per datasheet) —
RoHS 狀態 Compliant Compliant (Lead-Free & Halogen-Free)
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
CAS 延遲 [DATA_NEEDED: CL for PBC speed bin] —
Geardown Mode Note DDR4-1600/1866/2133/2400 bins valid only when Geardown Mode is disabled —
Manufacturer — SK hynix (Hynix Semiconductor)
Supply Voltage (VDD) — 1.2 V
Speed Grade — UHC
介面 — Synchronous, dual rising/falling clock edges
Clock Input — Differential CK_t / CK_c
工作溫度 — [DATA_NEEDED: operating temperature range]
Family Variants — H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC
Datasheet Revision — Rev. 1.2 (Jul. 2017), 45 pages
MSL 等級 — [DATA_NEEDED: moisture sensitivity level]
Packaging — [DATA_NEEDED: reel / tray quantity]

資料表與資源

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