H5AN8G8NAFR-UHCR vs H5AN8G8NAFR-UHI 比較

詳細並排比較 H5AN8G8NAFR-UHCR 由 SK hynix 與 H5AN8G8NAFR-UHI 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN8G8NAFR-UHCR H5AN8G8NAFR-UHCR - 8Gb DDR4 SDRAM 2400 1.2V | SK Hynix

H5AN8G8NAFR-UHCR - 8Gb DDR4 SDRAM 2400 1.2V | SK Hynix

H5AN8G8NAFR-UHCR ✓ 啟用中
SK hynix
H5AN8G8NAFR-UHI H5AN8G8NAFR-UHI - 8Gb DDR4-2400 x8 SDRAM | SK Hynix

H5AN8G8NAFR-UHI - 8Gb DDR4-2400 x8 SDRAM | SK Hynix

H5AN8G8NAFR-UHI ✓ 啟用中

規格比較

參數 H5AN8G8NAFR-UHCR H5AN8G8NAFR-UHI
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit —
組織 1G x 8 1G x 8
資料速率 2400 Mbps/pin (PC2400) DDR4-2400 (PC2400), 1200 MHz clock
Supply Voltage (VDD) 1.2 V —
介面 CMOS, synchronous DDR4 DDR4 (JEDEC-class)
封裝 FBGA-78 (PBGA78) 78-ball FBGA
安裝類型 Surface Mount Surface Mount
Packing Suffix R = Tape & Reel —
Speed Grade Code -UH —
Generation Family H5AN8GxNAFR-xxC (DDR4) —
RoHS 狀態 Compliant (Lead-Free & Halogen-Free) Compliant
Application Class Main memory / high bandwidth —
CAS 延遲 [DATA_NEEDED: CAS latency (CL)] [DATA_NEEDED: CAS latency for UHI speed grade]
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Refresh Rate [DATA_NEEDED: refresh specification] —
MSL 等級 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Memory Density — 8 Gb
供應電壓 — 1.2 V
Lead Free — Yes
無鹵素 — Yes
Technology — CMOS
Application — Main memory (high density, high bandwidth)
Refresh — [DATA_NEEDED: refresh specification]

資料表與資源

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