H5AN8G8NAFR-UHCR - 8Gb DDR4 SDRAM 2400 1.2V | SK Hynix
MPN： H5AN8G8NAFR-UHCR ✓ 啟用中H5AN8G8NAFR-UHCR 概覽
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory. In the memory hierarchy it sits as main system memory (DRAM), below CPU caches and above storage. Compared with DDR3, DDR4 halves the interface supply voltage to 1.2V, increases the internal bank count (typically 16 banks across 4 bank groups), and raises transfer rates, delivering higher bandwidth at lower power per bit.
Key features of the H5AN8G8NAFR-UHCR include 8Gbit density organized as 1G x 8, a 2400 Mbps/pin data rate (PC2400 per distributor listings), and a compact 78-ball FBGA footprint suited to dense PCB layouts. The part is lead-free and halogen-free and is RoHS compliant, as stated on the SK hynix datasheet title block.
The device uses CMOS process technology with a DDR4 interface: differential clock inputs, on-die termination (ODT), bank-group architecture for higher effective bandwidth, and command/address signaling consistent with the JEDEC DDR4 SDRAM standard class. As an x8 component it presents a single DQ byte lane with DQS/DQS# strobes, simplifying controller interconnect in single-rank or multi-rank designs.
Typical applications include desktop and notebook main memory modules (UDIMM/SODIMM), embedded and industrial computing boards, networking and telecommunications equipment, and server platforms using component-level DRAM. High density per component (8Gb) allows fewer devices per board, reducing BOM count and routing complexity.
Designers should observe DDR4 power-integrity requirements: a clean 1.2V VDD rail, appropriate VPP supply, and fly-by command/address routing with per-byte ODT tuning. Signal-length matching of DQS to DQ per byte lane is critical at 2400 Mbps. Verify speed-bin suffix compatibility when sourcing alternates, since the suffix encodes speed grade and packing option (the trailing R denotes tape-and-reel packing).
This page synthesizes distributor listings, cross-reference data, drop-in alternative MPNs, and practical DDR4 design notes not found in the manufacturer datasheet alone.
直接替換替代品，適用於 H5AN8G8NAFR-UHCR — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： H5AN8G8NAFR-UHCR （相同外形與佔位） — 差異在於 Interface, Package, Organization, RoHS Status, Data Rate.
H5AN8G8NAFR-UHC
✅ 直接替換聯絡詢價
查看資料表 →H5AN8G8NAFR-UHI
✅ 直接替換聯絡詢價
查看資料表 →H5AN8G8NAFR-VKC
✅ 直接替換聯絡詢價
查看資料表 →H5AN8G8NAFR-RDC
✅ 直接替換聯絡詢價
查看資料表 →H5AN8G8NAFR-PBC
✅ 直接替換聯絡詢價
查看資料表 →H5AN8G6NAFR-VKC
✅ 直接替換聯絡詢價
查看資料表 →H5AN8G8NAFR-UHCR 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| Density | 8 Gbit |
| 組織 | 1G x 8 |
| 資料速率 | 2400 Mbps/pin (PC2400) |
| Supply Voltage (VDD) | 1.2 V |
| 介面 | CMOS, synchronous DDR4 |
| 封裝 | FBGA-78 (PBGA78) |
| 安裝類型 | Surface Mount |
| Packing Suffix | R = Tape & Reel |
| Speed Grade Code | -UH |
| Generation Family | H5AN8GxNAFR-xxC (DDR4) |
| RoHS 狀態 | Compliant (Lead-Free & Halogen-Free) |
| Application Class | Main memory / high bandwidth |
H5AN8G8NAFR-UHCR fbga-78 (pbga78) 腳位配置指南
H5AN8G8NAFR-UHCR（fbga-78 (pbga78) 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： H5AN8G8NAFR-UHCR.
請參閱 資料表 以查看完整腳位配置。
典型應用
H5AN8G8NAFR-UHCR 適用於 6 應用s: Desktop and Notebook Main Memory Modules, Embedded and Industrial Computing Boards, Networking and Telecommunications Equipment, Server and Data Center Memory Subsystems, Automotive Infotainment and Telematics (non-safety), Test, Measurement and Video Processing Equipment.
Desktop and Notebook Main Memory Modules
The H5AN8G8NAFR-UHCR is a natural fit for UDIMM and SODIMM module assembly. Each 8Gb 1G x 8 chip at 2400 Mbps provides a full byte lane, so eight devices form a 64-bit, 8GB rank - a standard module topology. Its 1.2V DDR4 interface meets JEDEC DDR4 module power budgets, and the compact FBGA-78 package keeps per-chip board area low for high-density modules. At 2400 Mbps, fly-by command/address routing with per-rank ODT tuning keeps eye margins comfortable on 8-layer module stacks; designers should match DQS/DQ trace lengths within the byte lane and run read/write leveling in the memory controller. Because the -UH bin is cost-optimized versus 2666-class bins, it suits mainstream computing platforms that do not need top-bin bandwidth.
推薦
Embedded and Industrial Computing Boards
Industrial controllers, HMI panels, and edge-computing boards use component-level DDR4 such as the H5AN8G8NAFR-UHCR to provide gigabytes of main memory without SO-DIMM sockets. The 1.2V supply reduces total memory power versus DDR3 at the same bandwidth, easing thermal design in fanless enclosures, while the 8Gb density allows a compact two-chip 2GB bank on a 1G x 8 bus segment. For extended-temperature industrial programs the footprint-compatible H5AN8G8NAFR-UHI industrial bin can be swapped without any PCB change. Layout practice on industrial boards: keep the DRAM within 50 mm of the SoC, use length-matched fly-by C/A routing, and reserve series termination near the SoC to damp reflections at 2400 Mbps in 4-6 layer stacks.
推薦
Networking and Telecommunications Equipment
Switches, routers, and telecom line cards buffer packet data in large DRAM pools, making the 8Gb H5AN8G8NAFR-UHCR a strong candidate: 1G x 8 organization maps cleanly to byte-wide packet engines, and 2400 Mbps per pin gives about 2.4 GB/s per chip of peak bandwidth for queue management. Multi-rank designs double capacity by stacking a second byte lane on the shared C/A bus, leveraging DDR4 bank-group architecture to sustain throughput between ranks. Networking equipment often runs 24/7 at elevated ambient temperatures, so designers should derate refresh (1x to 2x) above 85C per DDR4 rules, allocate solid VDD/VDDQ planes, and qualify the -UHI industrial variant where screening and temperature grade matter more than unit cost.
推薦
Server and Data Center Memory Subsystems
Component DRAM like the H5AN8G8NAFR-UHCR is used in server baseboard designs, memory daughter cards, and storage controllers where standard RDIMMs are impractical. The 8Gb density minimizes device count per GB, and DDR4's 1.2V operation helps contain total server memory power - a dominant contributor to data-center energy budgets. In multi-rank, multi-channel server topologies, mixing speed bins is not acceptable: all devices on a channel must run at the slowest bin timing, which is why qualifying the same -UH 2400 Mbps bin across ranks (using -UHC tray stock and -UHCR reel stock interchangeably) simplifies supply. Signal integrity at server trace lengths requires per-byte ODT optimization and read/write leveling; run IBIS simulations with the SK hynix models before layout release.
推薦
Automotive Infotainment and Telematics (non-safety)
DDR4 components are widely used in automotive head units, digital clusters, and telematics ECUs for OS and multimedia memory. The H5AN8G8NAFR-UHCR's 8Gb density supports Linux/QNX-based infotainment stacks with 2-4 GB footprints from just two to four chips, and its 1.2V interface reduces memory-rail power in always-on cabin electronics. Note that the standard -UHCR is not AEC-Q100 qualified; for automotive programs requiring qualified DRAM, use the vendor's automotive-grade bin and verify PPAP availability with SK hynix. Infotainment designs should implement the controller's automatic temperature-compensated refresh, follow the fly-by routing discipline, and place the DRAM away from RF/GNSS modules in the telematics unit to avoid switching-noise coupling into receivers.
推薦
Test, Measurement and Video Processing Equipment
Oscilloscopes, video frame buffers, and data-acquisition systems need deep, fast streaming buffers, and the H5AN8G8NAFR-UHCR delivers 8Gb per chip at 2400 Mbps - roughly 2.4 GB/s peak per device for capture pipelines. Its x8 byte-lane organization lets designers scale buffer width in byte increments, e.g., four chips forming a 32-bit, 4GB capture buffer. DDR4 bank-group architecture sustains sequential write streams from high-speed ADCs better than earlier generations, but burst-write efficiency depends on bank interleaving in the memory controller; schedule refresh via the controller's deferred-refresh mechanisms to avoid overrun during long captures. Use low-jitter clock distribution to CK/CK# and keep the DRAM clock tree short to preserve setup/hold timing across temperature.
推薦
推薦產品摘要
工程參考資料，適用於 H5AN8G8NAFR-UHCR — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | H5AN8G8NAFR-UHC | H5AN8G8NAFR-UHI | H5AN8G8NAFR-VKC | H5AN8G8NAFR-RDC | H5AN8G8NAFR-PBC | H5AN8G6NAFR-VKC |
|---|---|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| RoHS Compliance | Compliant (lead-free, halogen-free) | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- Identical die at tray-packing price (對比H5AN8G8NAFR-UHC)
- Industrial screening option in the same footprint (對比H5AN8G8NAFR-UHI)
- Balanced speed-bin economics (對比H5AN8G8NAFR-VKC)
設計說明
At 2400 Mbps, DDR4 timing budgets are tight. Route command/address in fly-by topology terminated at the last device, and keep DQS/DQS# to DQ length matching within the byte lane per the controller vendor's layout guide (typical target +/-10 mil intra-lane). Simulate with SK hynix IBIS models before releasing the stackup; 6-layer boards with solid VDDQ reference planes are the practical minimum for a 64-bit interface. Enable read/write leveling and VrefDQ training in the controller during bring-up.
Provide a dedicated 1.2V VDD/VDDQ rail and the DDR4 VPP rail (typically 2.5V) per the JEDEC DDR4 power class. Decouple each DRAM ball cluster with a combination of bulk (10-22 uF) and high-frequency (0.1 uF, 0.01 uF) ceramics placed within 2 mm of the package. Burst write currents on 64-bit x8 buses can exceed 1 A transiently; size the VRM transient response accordingly and check rail droop against the DDR4 AC/DC specification under worst-case ODT settings.
Do not mix speed bins (e.g., -UHCR with -VKC) on the same channel - the controller must run all ranks at the slowest bin timing, which wastes the faster bin's bandwidth. The trailing R suffix only denotes tape-and-reel packing, so -UHCR and -UHC are electrically identical. Verify the exact die revision and the datasheet's speed-bin table when qualifying second sources, and confirm temperature-compensated refresh (AC/extended range) settings if the board operates above 85C.
合規資訊
Per SK hynix datasheet title block: Lead-Free & Halogen-Free (RoHS Compliant). REACH, conflict minerals, and AEC-Q100 status not stated in provided data.
