H5ANAG6NCR-VKC vs H5ANAG6NCJR-XNC 比較
詳細並排比較 H5ANAG6NCR-VKC 由 SK hynix 與 H5ANAG6NCJR-XNC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5ANAG6NCR-VKC | H5ANAG6NCJR-XNC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $68.91 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 16 Gbit | — |
| 組織 | 2G x 8 | — |
| 介面 | DDR4 (Double Data Rate 4) | Parallel |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| 資料速率 | [DATA_NEEDED: verified speed grade in Mbps] | 3200 Mbps/pin |
| 封裝 | 96-ball FBGA | FBGA-96 |
| 安裝類型 | Surface Mount | Surface Mount |
| Banks | 16 banks (4 bank groups x 4) | — |
| Burst Length | BL8 | — |
| Refresh Mode | 1x / 2x / 4X per JEDEC DDR4 | — |
| 工作溫度 | [DATA_NEEDED: temperature suffix range confirmation] | — |
| Technology | CMOS | — |
| Application | Main memory (PC / server / embedded) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance statement] | Compliant |
| 記憶體容量 | — | 16 Gbit |
| Memory Organization | — | 1G x 16 |
| Supply Voltage Range | — | 1.14 V to 1.26 V (VDD/VDDQ) |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Packaging | — | Tray |