HI5812JIBZ vs HI5812JIBZ-T 比較
詳細並排比較 HI5812JIBZ 由 Renesas Electronics 與 HI5812JIBZ-T 由 Renesas Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | HI5812JIBZ | HI5812JIBZ-T |
|---|---|---|
| 品牌 | Renesas Electronics | Renesas Electronics |
| 類別 | ADC/DAC | ADC/DAC |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 解析度 | 12 bit | 12 bits |
| Architecture | SAR (Successive Approximation) with internal Track-and-Hold | SAR (Successive Approximation Register) with internal Track-and-Hold |
| Number of Channels | 1 single-ended input | — |
| Sample Rate | 50 kSPS (max) | — |
| Conversion Time | 20 us (typical) | 20 us (max at 5 V supply) |
| 輸入電壓範圍 | 0 V to VREF (unipolar) | — |
| Reference Voltage (VREF) | [DATA_NEEDED: VREF max] | — |
| Integral Linearity Error (INL) | 1.5 LSB (max) | — |
| Analog Supply Voltage (VDD) | +5 V | — |
| Digital Interface | Parallel, user-selectable 12-bit / 8-bit MSB / 4-bit LSB | — |
| 輸出類型 | Three-state CMOS, latched across one full conversion | — |
| Control Inputs/Outputs | CONVERT_START (input), DATA_READY (flag) | — |
| Internal Clock | On-chip oscillator | — |
| Power Dissipation | 25 mW | — |
| 工作溫度範圍 | -40 C to +85 C | — |
| Package / Mounting | 24-pin SOIC (wide body), surface mount | — |
| Process Technology | High-speed CMOS with thin-film DAC | — |
| RoHS 狀態 | Compliant | Compliant |
| Number of Input Channels | — | 1 single-ended |
| 取樣率 | — | 50 kSPS (max) |
| Data Interface | — | Parallel |
| Supply Voltage (VDD) | — | 3 V to 6 V (single supply) |
| Supply Current (typ. at 5 V) | — | 1.9 mA |
| Input Type | — | Single-ended analog input |
| 封裝 / 外殼 | — | 24-SOIC (0.295 inch / 7.50 mm width) |
| 安裝類型 | — | Surface Mount |
| 工作溫度 | — | -40 C to +85 C |
| Power Dissipation (max) | — | 25 mW |
| Packaging | — | Tape and Reel (TR) |