IAUC100N04S6L025ATMA1 vs IPD034N06N3GATMA1 比較
詳細並排比較 IAUC100N04S6L025ATMA1 由 Infineon 與 IPD034N06N3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUC100N04S6L025ATMA1 | IPD034N06N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 6 40V trench MOSFET | N-Channel Trench MOSFET (OptiMOS 3) |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Power Dissipation (PD) at TC=25C | 62 W | — |
| 工作接面溫度 | -55 C to +175 C | — |
| 封裝 | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS 狀態 | Compliant | Compliant (Pb-free green finish) |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Maximum Power Dissipation (Ptot) | — | 167 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mOhm |
| Gate Threshold Voltage VGS(th) | — | 4 V at 93 uA |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: max VGS rating] |
| Pin Configuration | — | 3-Pin (2 + Tab) |
| 工作溫度範圍 | — | [DATA_NEEDED: Tj min/max] |
| Automotive Qualified | — | Yes (per Infineon product page) |