IAUC120N04S6N010ATMA1 vs IAUC100N04S6N022ATMA1 比較
詳細並排比較 IAUC120N04S6N010ATMA1 由 Infineon 與 IAUC100N04S6N022ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUC120N04S6N010ATMA1 | IAUC100N04S6N022ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 40 V | — |
| Continuous Drain Current (Id, Tc) | 150 A | — |
| Power Dissipation (Pd, Tc) | 150 W | — |
| RDS(on) at VGS=10V (typ) | 1.0 mΩ | — |
| RDS(on) at VGS=10V (max per LCSC excerpt) | 1.03 mΩ | — |
| Gate-Source Threshold (VGS(th), typ) | 3 V (at 90 µA) | — |
| Technology | OptiMOS 6 | OptiMOS 6, N-Channel MOSFET |
| 封裝 | PG-TDSON-8-34 (5x6 mm leadless) | PG-TDSON-8 (5x6 mm) leadless |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q100 (IAUC family) |
| 工作溫度範圍 | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) | -55C to +175C (junction) |
| MSL 等級 | 1 (per JEDEC J-STD-020, per Infineon TDSON family) | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant | Compliant |
| Gate Drive Recommendation | 10 V VGS for full RDS(on) spec | — |
| Polarity | Single N-channel | N-Channel enhancement mode |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 100 A |
| Power Dissipation (P_D, Tc) | — | 75 W |
| R_DS(on) (typ at V_GS=10V) | — | 2.2 mOhm |
| 腳位數 | — | 8 |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | — | [DATA_NEEDED: total gate charge] |
| Lead-Free | — | Yes |