IAUC120N06S5L032ATMA1 vs BSC0504NSIATMA1 比較
詳細並排比較 IAUC120N06S5L032ATMA1 由 Infineon 與 BSC0504NSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUC120N06S5L032ATMA1 | BSC0504NSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 (60 V) | — |
| 電晶體類型 | N-Channel, Enhancement Mode | N-channel MOSFET |
| Drain-to-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D, T_j) | 120 A | — |
| R_DS(on) Max (V_GS = 10 V) | 3.2 mOhm | — |
| Power Dissipation (P_D, T_C = 25 C) | 94 W | — |
| 封裝 | PG-TDSON-8-34 (5x6 mm) | PG-TDSON-8-6 |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 C to +175 C (T_j) | [DATA_NEEDED: operating temperature range] |
| Technology | OptiMOS 5 Trench | — |
| AEC-Q101 Qualified | Yes | — |
| RoHS 狀態 | Compliant | unknown |
| MSL 等級 | [DATA_NEEDED: MSL rating] | — |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typical and min/max] | — |
| Total Gate Charge Q_G | [DATA_NEEDED: Q_G total at V_GS=10V] | — |
| Drain-to-Source Voltage | — | 30 V |
| Continuous Drain Current at Ta | — | 21 A |
| Continuous Drain Current at Tc | — | 72 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| Technology Family | — | OptiMOS 5 |
| 腳位數 | — | 8 pins |
| Exposed Pad | — | Yes, according to distributor package description |
| On-State Resistance | — | [DATA_NEEDED: on-state resistance] |
| Gate Charge | — | [DATA_NEEDED: gate charge] |
| 閘極臨界電壓 | — | [DATA_NEEDED: gate threshold voltage] |
| 熱阻 | — | [DATA_NEEDED: thermal resistance] |
| AEC-Q100 Qualification | — | [DATA_NEEDED: AEC-Q100 qualification] |
| Lead-Free Status | — | unknown |
| Halogen-Free Status | — | unknown |
| REACH Status | — | unknown |