IAUC60N04S6L030HATMA1 vs IAUA180N04S5N012AUMA1 比較

詳細並排比較 IAUC60N04S6L030HATMA1 由 Infineon 與 IAUA180N04S5N012AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ 啟用中
Infineon
IAUA180N04S5N012AUMA1 IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 ✓ 啟用中

規格比較

參數 IAUC60N04S6L030HATMA1 IAUA180N04S5N012AUMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 6 —
Configuration Half-Bridge (2 N-Channel) —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TJ 60 A —
On-Resistance R_DS(on) at VGS=10V 3.0 mOhm (typical) —
Total Gate Charge (Qg) at VGS=10V 35 nC —
Output Capacitance (Coss) 2.128 nF —
Reverse Transfer Capacitance (Crss) 596 pF —
Gate Threshold Voltage (VGS(th)) 2 V —
Maximum Power Dissipation (PD) at TC 75 W —
工作接面溫度 -55 C to +175 C —
封裝 PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm²
安裝類型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per part number suffix) AEC-Q101
RoHS 狀態 Compliant Compliant
MSL 等級 1 (per JEDEC J-STD-020) —
Part Number — IAUA180N04S5N012AUMA1
Series — OptiMOS-5 40 V
FET Type — N-Channel
Continuous Drain Current (ID) — 180 A (Tc)
Maximum Power Dissipation (PD) — 125 W (Tc)
R_DS(on) (max) — 1.2 mΩ at 10 V VGS
Gate-Source Voltage (VGS) max — ±20 V
工作溫度範圍 — -55 °C to +175 °C (Tj)
Technology — OptiMOS-5 Trench

資料表與資源

瀏覽所有產品 建立 BOM 索取報價