IAUC60N04S6L030HATMA1 vs IAUA180N04S5N012AUMA1 对比

详细并排对比 IAUC60N04S6L030HATMA1 出自 Infineon 和 IAUA180N04S5N012AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ 量产中
Infineon
IAUA180N04S5N012AUMA1 IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 ✓ 量产中

规格对比

参数 IAUC60N04S6L030HATMA1 IAUA180N04S5N012AUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.94 $1.96
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 6 —
Configuration Half-Bridge (2 N-Channel) —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TJ 60 A —
On-Resistance R_DS(on) at VGS=10V 3.0 mOhm (typical) —
Total Gate Charge (Qg) at VGS=10V 35 nC —
Output Capacitance (Coss) 2.128 nF —
Reverse Transfer Capacitance (Crss) 596 pF —
Gate Threshold Voltage (VGS(th)) 2 V —
Maximum Power Dissipation (PD) at TC 75 W —
工作结温 -55 C to +175 C —
封装 PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm²
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per part number suffix) AEC-Q101
RoHS 状态 Compliant Compliant
MSL 等级 1 (per JEDEC J-STD-020) —
Part Number — IAUA180N04S5N012AUMA1
Series — OptiMOS-5 40 V
FET Type — N-Channel
Continuous Drain Current (ID) — 180 A (Tc)
Maximum Power Dissipation (PD) — 125 W (Tc)
R_DS(on) (max) — 1.2 mΩ at 10 V VGS
Gate-Source Voltage (VGS) max — ±20 V
工作温度范围 — -55 °C to +175 °C (Tj)
Technology — OptiMOS-5 Trench

数据手册与资源

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