IAUC60N04S6L030HATMA1 vs IAUC100N04S6N022ATMA1 比較
詳細並排比較 IAUC60N04S6L030HATMA1 由 Infineon 與 IAUC100N04S6N022ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUC60N04S6L030HATMA1 | IAUC100N04S6N022ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Series | OptiMOS 6 | — |
| Configuration | Half-Bridge (2 N-Channel) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TJ | 60 A | — |
| On-Resistance R_DS(on) at VGS=10V | 3.0 mOhm (typical) | — |
| Total Gate Charge (Qg) at VGS=10V | 35 nC | — |
| Output Capacitance (Coss) | 2.128 nF | — |
| Reverse Transfer Capacitance (Crss) | 596 pF | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| Maximum Power Dissipation (PD) at TC | 75 W | — |
| 工作接面溫度 | -55 C to +175 C | — |
| 封裝 | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) | PG-TDSON-8 (5x6 mm) leadless |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per part number suffix) | AEC-Q100 (IAUC family) |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Technology | — | OptiMOS 6, N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 100 A |
| Power Dissipation (P_D, Tc) | — | 75 W |
| R_DS(on) (typ at V_GS=10V) | — | 2.2 mOhm |
| 工作溫度範圍 | — | -55C to +175C (junction) |
| Polarity | — | N-Channel enhancement mode |
| 腳位數 | — | 8 |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | — | [DATA_NEEDED: total gate charge] |
| Lead-Free | — | Yes |