IAUCN04S7L005ATMA1 vs IAUCN04S7N027GATMA1 比較

詳細並排比較 IAUCN04S7L005ATMA1 由 Infineon 與 IAUCN04S7N027GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUCN04S7L005ATMA1 IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon

IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon

IAUCN04S7L005ATMA1 ✓ 啟用中
Infineon
IAUCN04S7N027GATMA1 IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6

IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6

IAUCN04S7N027GATMA1 ✓ 啟用中

規格比較

參數 IAUCN04S7L005ATMA1 IAUCN04S7N027GATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Technology OptiMOS 7 (trench N-channel MOSFET) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, T_C=25°C) 430 A (Tj) —
Continuous Drain Current (I_D, T_C=100°C) [DATA_NEEDED: I_D at T_C=100°C] —
On-Resistance R_DS(on) max 0.52 mΩ —
Power Dissipation (P_D) 179 W (T_C) —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical and min/max] —
Total Gate Charge (Q_g) [DATA_NEEDED: total Q_g in nC] —
工作溫度範圍 -55°C to +175°C (Tj) [DATA_NEEDED: operating temperature range]
封裝 PG-TDSON-8-43 (TDSON-8) —
安裝類型 Surface Mount Surface Mount
腳位數 8 —
Automotive Qualification AEC-Q101 qualified —
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
MSL 等級 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL]
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
封裝 / 外殼 — PG-THSOG-4-1 (SSO4G 5x6)
Qualification — Automotive
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Substrate Compatibility — IMS substrates and legacy FR-4

資料表與資源

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