IAUCN04S7L019ATMA1 vs BSC040N10NS5ATMA1 比較

詳細並排比較 IAUCN04S7L019ATMA1 由 Infineon 與 BSC040N10NS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUCN04S7L019ATMA1 IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L019ATMA1 ✓ 啟用中
Infineon
BSC040N10NS5ATMA1 BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC040N10NS5ATMA1 ✓ 啟用中

規格比較

參數 IAUCN04S7L019ATMA1 BSC040N10NS5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Series OptiMOS™ 7 —
FET Type N-Channel N-Channel
Drain-to-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>) 120 A —
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V 1.91 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: Vgs(th) typical/max value] —
Gate Charge (Q<sub>g</sub>) [DATA_NEEDED: Qg total/nominal value] —
封裝 PG-TDSON-8-33 PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8
安裝類型 Surface Mount Surface Mount
工作溫度 -55°C to +175°C (junction) —
Power Dissipation (P<sub>D</sub>) [DATA_NEEDED: Pd max at 25C] —
熱阻,接面至環境 [DATA_NEEDED: RthJA value] —
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per Infineon OptiMOS 5 family)
RoHS 狀態 Compliant Compliant
MSL 等級 1 —
Packaging Tape & Reel (13-inch reel) —
Standard Pack Quantity 5000 pieces —
Ordering Code Suffix ATMA1 (Tape & Reel 13") —
Technology — OptiMOS 5
Drain-Source Voltage (VDS) — 100 V
Maximum On-Resistance (RDS(on)) — 4 mOhm
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) max — 136 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 139 W
工作溫度範圍 — -55C to +150C
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Output Capacitance Reduction — Up to 44% vs previous generation
RDS(on) Reduction — Up to 43% vs previous generation

資料表與資源

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