IAUCN04S7L019ATMA1 vs BSC059N04LS6ATMA1 比較

詳細並排比較 IAUCN04S7L019ATMA1 由 Infineon 與 BSC059N04LS6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUCN04S7L019ATMA1 IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L019ATMA1 ✓ 啟用中
Infineon
BSC059N04LS6ATMA1 BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 ✓ 啟用中

規格比較

參數 IAUCN04S7L019ATMA1 BSC059N04LS6ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Series OptiMOS™ 7 —
FET Type N-Channel —
Drain-to-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>) 120 A —
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V 1.91 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: Vgs(th) typical/max value] —
Gate Charge (Q<sub>g</sub>) [DATA_NEEDED: Qg total/nominal value] —
封裝 PG-TDSON-8-33 PG-TDSON-8-6 (SuperSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount
工作溫度 -55°C to +175°C (junction) —
Power Dissipation (P<sub>D</sub>) [DATA_NEEDED: Pd max at 25C] —
熱阻,接面至環境 [DATA_NEEDED: RthJA value] —
Automotive Qualification AEC-Q101 qualified —
RoHS 狀態 Compliant Compliant
MSL 等級 1 —
Packaging Tape & Reel (13-inch reel) —
Standard Pack Quantity 5000 pieces —
Ordering Code Suffix ATMA1 (Tape & Reel 13") —
Technology — OptiMOS 6 (N-channel MOSFET)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TA=25C — 17 A
Continuous Drain Current (ID) at TC=25C — 49 A
Pulsed Drain Current (ID,pulse) at TC=25C — 59 A
On-Resistance RDS(on) max — 5.9 mOhm at VGS=10 V
Total Power Dissipation at TA=25C — 3 W
Total Power Dissipation at TC=25C — 38 W
Gate-Source Voltage (VGS) max — +/-20 V
工作溫度範圍 — -55C to +150C
Diode Continuous Forward Current (IS) — 38 A at TC=25C
Diode Pulse Current (IS,pulse) — 236 A at TC=25C
Lead-Free — Yes

資料表與資源

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