IAUT300N08S5N011ATMA1 vs IAUT300N10S5N015ATMA1 比較
詳細並排比較 IAUT300N08S5N011ATMA1 由 Infineon 與 IAUT300N10S5N015ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon
IAUT300N10S5N015ATMA1 ✓ 啟用中規格比較
| 參數 | IAUT300N08S5N011ATMA1 | IAUT300N10S5N015ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 5 N-Channel Power MOSFET |
| Drain-Source Voltage (V_DS) | 80 V | — |
| Continuous Drain Current (I_D, T_C=25C) | 300 A | — |
| Pulsed Drain Current (I_DM) | 410 A (Tj) | — |
| R_DS(on) max | 1.10 mOhm at V_GS=10 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.8 V | — |
| Total Gate Charge (Q_g) | 231 nC at V_GS=10 V | — |
| Input Capacitance (C_iss) | 16.25 nF | — |
| Output Capacitance (C_oss) | 2.6 nF | — |
| Reverse Transfer Capacitance (C_rss) | 130 pF | — |
| Power Dissipation (P_D) | 375 W at T_C=25C | — |
| 工作溫度範圍 | -55C to +175C | -55°C to +175°C |
| 封裝 | PG-HSOF-8-1 (TOLL 10x12 mm) | PG-HSOF-8-1 (HSOF-8) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 | MSL1 (260°C peak reflow) |
| Qualification | Automotive (AEC-Q101) | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 300 A |
| Power Dissipation (PD, Tc) | — | 375 W |
| RDS(on) (typ, VGS=10V) | — | 1.5 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th), typ) | — | [DATA_NEEDED: VGS(th) value] |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | RoHS compliant (Green product) |
| Avalanche Tested | — | 100% avalanche tested |
| Polarity | — | N-Channel |
| Mode of Operation | — | Enhancement-mode |