IAUZ30N06S5L140ATMA1 vs IPD090N03LGATMA1 比較
詳細並排比較 IAUZ30N06S5L140ATMA1 由 Infineon 與 IPD090N03LGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUZ30N06S5L140ATMA1 | IPD090N03LGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 30 A (Tj) | — |
| Power Dissipation (PD, Tc) | 33 W | — |
| RDS(on) Max @ VGS=10 V | 14 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 2.2 V (typ) | — |
| Total Gate Charge (Qg) | 12.2 nC @ VGS=10 V | [DATA_NEEDED: Qg total] |
| Output Capacitance (Coss) | 888 pF @ VDS=30 V | [DATA_NEEDED: Coss] |
| 封裝 | PG-TSDSON-8-32 (S3O8, 3x3 mm) | PG-TO252-3-11 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作接面溫度 | -55°C to +175°C | — |
| Technology Family | OptiMOS 5 | OptiMOS 30V |
| Automotive Grade | AEC-Q101 qualified | — |
| Gate-Source Voltage Max | ±20 V | — |
| Lead-Free / RoHS | Yes (RoHS compliant) | — |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 40 A |
| Continuous Drain Current (Id) @ Tc=100C | — | [DATA_NEEDED: Id at 100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed Id] |
| Maximum Power Dissipation (Pd) @ Tc=25C | — | 42 W |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | — | 9 mOhm (typical) |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | — | [DATA_NEEDED: Rds(on) at 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| 工作溫度範圍 | — | -55C to +175C (junction) |
| MSL 等級 | — | 1 (unlimited) |
| RoHS 狀態 | — | Compliant |
| Configuration | — | Single |