IGI60L5050B1MXUMA1 vs IGI60L1414B1MXUMA1 比較
詳細並排比較 IGI60L5050B1MXUMA1 由 Infineon 與 IGI60L1414B1MXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IGI60L5050B1MXUMA1 - 600V GaN Half-Bridge with Integrated Driver | Infineon
IGI60L5050B1MXUMA1 ✓ 啟用中規格比較
| 參數 | IGI60L5050B1MXUMA1 | IGI60L1414B1MXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | Transistors |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | GaN (Gallium Nitride), enhancement-mode | GaN (Gallium Nitride), enhancement-mode |
| Configuration | Half-bridge (high-side + low-side switch with integrated gate driver) | Half-bridge (high-side + low-side switch) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| On-State Resistance (RDS(on)) per switch | 500 mΩ (0.5 Ω) | — |
| Number of GaN Switches | 2 | — |
| Gate Driver Source Current | +0.29 A | — |
| Gate Driver Sink Current | -0.7 A | — |
| Integrated Bootstrap Diode | Yes (ultra-fast, low-resistance) | — |
| Turn-on / Turn-off dV/dt | Application-configurable (via gate resistor) | — |
| 封裝 | PG-TFLGA-27-2 (TFLGA-27), 6x8 mm | PG-TFLGA-27-2 |
| 腳位數 | 27 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -40 °C to +125 °C (junction 150 °C) | [DATA_NEEDED: operating temperature range] |
| RoHS 狀態 | Compliant | Compliant |
| Reach Status | Compliant | — |
| Lead-Free | Yes | — |
| Target Applications | Totem-pole PFC, LLC converters, HF SMPS, BLDC drives | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolGaN™ (IGI family) |
| Continuous Drain Current (ID) | — | 6.0 A |
| On-Resistance (RDS(on)) | — | 140 mΩ (per switch) |
| Gate Driver | — | Integrated (high-side + low-side) |
| Level Shifter | — | Integrated high-voltage level shifter |
| Bootstrap Diode | — | Integrated ultra-fast low-resistance |
| Source Drive Current | — | +0.29 A |
| Sink Drive Current | — | -0.7 A |
| Turn-On/Turn-Off | — | Application-configurable (external Rg) |
| Application Category | — | SMPS, PFC, motor drive, Class-D audio |