IPB027N10N3GATMA1 vs IPB025N10N3GATMA1 比較
詳細並排比較 IPB027N10N3GATMA1 由 Infineon 與 IPB025N10N3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
IPB025N10N3GATMA1 ✓ 啟用中規格比較
| 參數 | IPB027N10N3GATMA1 | IPB025N10N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 3 (Trench MOSFET) | OptiMOS 3 trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Power Dissipation (PD) at TC=25°C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mΩ | — |
| On-Resistance RDS(on) typical at VGS=10V | 2.7 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and min/max VGS(th) values] | — |
| 工作溫度範圍 | -55°C to +175°C (TJ) | -55C to +175C (junction) |
| 封裝 | PG-TO263-3 (D2PAK) | PG-TO263-7 (D2PAK-7) 6+Tab |
| 安裝類型 | Surface Mount | Surface Mount |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: exact °C/W value] | — |
| Single Pulse Avalanche Energy (EAS) | [DATA_NEEDED: datasheet EAS figure] | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | 1 (unlimited) |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg at VGS=10V] | — |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| Power Dissipation (PD) at Tc | — | 300 W |
| RDS(on) Typical at VGS=10V, ID=100A | — | 2.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.5 V |
| Input Capacitance (Ciss) | — | 2.58 nF |
| Gate Charge (Qg) Typical | — | [DATA_NEEDED: Qg value] |
| 無鹵素 | — | Yes |