IPB072N15N3GATMA1 vs BSC123N08NS3GATMA1 比較

詳細並排比較 IPB072N15N3GATMA1 由 Infineon 與 BSC123N08NS3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB072N15N3GATMA1 IPB072N15N3GATMA1 - 150V 100A N-Ch OptiMOS 3 MOSFET | Infineon

IPB072N15N3GATMA1 - 150V 100A N-Ch OptiMOS 3 MOSFET | Infineon

IPB072N15N3GATMA1 ✓ 啟用中
Infineon
BSC123N08NS3GATMA1 BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon

BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon

BSC123N08NS3GATMA1 ✓ 啟用中

規格比較

參數 IPB072N15N3GATMA1 BSC123N08NS3GATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology OptiMOS 3 (trench MOSFET) —
Drain-Source Voltage (V_DS) 150 V —
Continuous Drain Current (I_D, Tc=25C) 100 A —
Continuous Drain Current (I_D, Tc=100C) [DATA_NEEDED: I_D at Tc=100C] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed I_DM] —
Maximum Power Dissipation (P_D, Tc=25C) 300 W —
R_DS(on) typical at VGS=10V 7.2 mOhm —
R_DS(on) max at VGS=10V [DATA_NEEDED: max R_DS(on) at VGS=10V] —
Gate-Source Voltage (V_GS) max +/-20 V —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
Total Gate Charge (Q_g) [DATA_NEEDED: Q_g typical at VGS=10V] —
工作溫度範圍 -55 C to +175 C —
封裝 PG-TO263-3-2 (D2PAK-2, 3 pins + tab) PG-TDSON-8-1 (SuperSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant with exemption
Avalanche Energy Rated Yes (single-pulse E_AS) —
Intrinsic Body Diode Yes (low Q_rr, sync-rectifier capable) —
Manufacturer Ordering Code Suffix GATMA1 (tape and reel, 1000 pcs) —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 3
Channel Type — N-Channel
Configuration — Single with built-in body diode
Maximum Drain-Source Voltage (VDS) — 80 V
Maximum Continuous Drain Current (ID, Tc) — 55 A
Maximum Continuous Drain Current (ID, Ta) — 11 A
Maximum Pulsed Drain Current — [DATA_NEEDED: pulsed drain current]
Maximum RDS(on) @ VGS=10 V — 12.3 mOhm
Maximum Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation (Tc) — 66 W
Power Dissipation (Ta) — 2.5 W
工作接面溫度 — -55C to +150C
MSL 等級 — 1 (per JEDEC J-STD-020)
Automotive Qualified — Yes (AEC-Q101)

資料表與資源

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