IPC100N04S52R8ATMA1 vs IPC100N04S5L1R5ATMA1 比較

詳細並排比較 IPC100N04S52R8ATMA1 由 Infineon 與 IPC100N04S5L1R5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPC100N04S52R8ATMA1 IPC100N04S52R8ATMA1 - 40V 100A N-Ch OptiMOS MOSFET | Infineon

IPC100N04S52R8ATMA1 - 40V 100A N-Ch OptiMOS MOSFET | Infineon

IPC100N04S52R8ATMA1 ✓ 啟用中
Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ 啟用中

規格比較

參數 IPC100N04S52R8ATMA1 IPC100N04S5L1R5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Continuous Drain Current (ID, Tc=100C) [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: VGS(th) typical] —
On-State Resistance RDS(on) typ @ VGS=10V 2.8 mOhm —
On-State Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max] —
Power Dissipation (PD, Tc=25C) 75 W —
工作接面溫度 -55C to +175C —
封裝 PG-TDSON-8-34 (TDSON-8 EP) PG-TDSON-8-34 (SS08 leadless)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (260C peak reflow) MSL1 (260C peak reflow)
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% (per Infineon standard) 100%
RoHS / Green Product Yes (RoHS compliant) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-5 40 V
Polarity / Channel Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max — 40 V
Gate-Source Voltage (VGS) Max — 20 V
Continuous Drain Current (ID) at Tc=25C — 100 A
Power Dissipation (PD) at Tc=25C — 115 W
On-Resistance RDS(on) at VGS=10 V — 1.5 mOhm (typ)
On-Resistance RDS(on) at VGS=4.5 V — 1.8 mOhm (typ)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
工作溫度範圍 — -55C to +175C
AEC-Q101 Qualified — Yes
RoHS 狀態 — Compliant (Green Product)

資料表與資源

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