IPD135N03LGATMA1 vs IRFZ44NPBF 比較
詳細並排比較 IPD135N03LGATMA1 由 Infineon 與 IRFZ44NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD135N03LGATMA1 | IRFZ44NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) | 30 A (Tc) | — |
| Power Dissipation (PD) | 31 W (Tc) | — |
| 封裝 / 外殼 | PG-TO252-3 (DPAK), Surface Mount | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Gate Charge (Qg) | Ultra-low (per OptiMOS™ family spec) | — |
| Output Charge (Qoss) | Ultra-low (per OptiMOS™ family spec) | — |
| 工作溫度範圍 | -55°C to +175°C (TJ max typical for OptiMOS) | — |
| 安裝類型 | Surface Mount | Through Hole |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free Finish | Yes | — |
| Qualification | Industrial (Infineon OptiMOS™ standard grade) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 49 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | +/- 20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 17.5 mOhm |
| Total Gate Charge (Qg) | — | 42 nC |
| Power Dissipation (PD) at Tc=25C | — | 94 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 62 C/W |
| 工作接面溫度 | — | -55C to +175C |
| 封裝 | — | TO-220AB (3-pin + tab) |
| Technology | — | HEXFET (Advanced Process) |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS rating] |