IPD60R210PFD7SAUMA1 vs IPD50R380CEAUMA1 比較

詳細並排比較 IPD60R210PFD7SAUMA1 由 Infineon 與 IPD50R380CEAUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD60R210PFD7SAUMA1 IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon

IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon

IPD60R210PFD7SAUMA1 ✓ 啟用中

規格比較

參數 IPD60R210PFD7SAUMA1 IPD50R380CEAUMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Product Family CoolMOS PFD7 —
Technology Superjunction (CoolMOS) N-Channel Power MOSFET CoolMOS CE (super-junction)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc) 16 A —
On-Resistance (RDS(on), max) 210 mOhm —
Power Dissipation (Ptot, Tc=25C) 64 W —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Package Type TO-252 (DPAK) —
Manufacturer Package Designator PG-TO252-3-344 —
安裝類型 Surface Mount (SMT) Surface Mount
Pin Configuration 3-Pin (2+Tab) - Gate, Drain (tab), Source —
工作溫度範圍 -55C to +150C (TJ) —
Lead-Free / RoHS Yes (compliant) —
Application Segment Consumer-grade SMPS —
Drain-Source Voltage (V(BR)DSS) — 500 V
Continuous Drain Current (Id) at Tc=25C — 14.1 A
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: Idm]
On-State Resistance (RDS(on)) max at VGS=10V — 380 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Total Power Dissipation (Ptot) at Tc=25C — 98 W
工作接面溫度 — -55C to +150C
Channel Type — N-Channel
封裝 — PG-TO252-3 (DPAK)
RoHS 狀態 — Compliant
AEC-Q101 Automotive — Not qualified (CE variant; use CE-A for automotive)
MSL (Moisture Sensitivity Level) — [DATA_NEEDED: MSL level]

資料表與資源

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