IPG20N10S436AATMA1 vs IPB17N25S3100ATMA1 比較
詳細並排比較 IPG20N10S436AATMA1 由 Infineon 與 IPB17N25S3100ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPG20N10S436AATMA1 | IPB17N25S3100ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Configuration | Dual N-Channel (2 Elements with Built-in Diode) | — |
| Drain-Source Voltage (VDS) | 100 V | 250 V |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Total Power Dissipation (PD) | 43 W | — |
| Operating Mode | Enhancement Mode | — |
| 封裝 | PG-TDSON-8-10 (Wettable Flank) | PG-TO263-3-2 (D2PAK-2) |
| 安裝類型 | Surface Mount | Surface Mount |
| Operating Temperature (TJ max) | +175 C | — |
| JESD-609 Code | e3 | — |
| MSL 等級 | MSL1 (260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100% | — |
| AOI Compatible | Yes (Wettable Flank) | — |
| RoHS 狀態 | Compliant (Green Product) | Compliant (Green Product) |
| Channel Type | N-Channel Normal Level | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPB17N25S3100ATMA1 |
| 電晶體類型 | — | N-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID) at Tc | — | 17 A |
| Pulsed Drain Current (IDM) | — | 64 A |
| Drain-Source On-Resistance (RDS(on)) | — | 100 mOhm max @ VGS = 10 V |
| Typical RDS(on) | — | 19.3 mOhm (manufacturer trench-technology figure, per datasheet collateral) |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 4 V |
| Total Gate Charge (Qg) | — | 19 nC @ VGS = 10 V |
| Input Capacitance (Ciss) | — | 1.5 nF |
| Output Capacitance (Coss) | — | 23 pF |
| Reverse Transfer Capacitance (Crss) | — | 625 pF |
| Power Dissipation (PD) | — | 107 W at Tc = 25 C |
| 工作溫度範圍 | — | -55 C to +175 C |
| MSL (Moisture Sensitivity Level) | — | MSL1 (up to 260 C peak reflow) |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| Avalanche Rated | — | 100% avalanche tested |