IPG20N10S4L22AATMA1 vs IPC50N04S5L5R5ATMA1 比較
詳細並排比較 IPG20N10S4L22AATMA1 由 Infineon 與 IPC50N04S5L5R5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ 啟用中規格比較
| 參數 | IPG20N10S4L22AATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | Dual N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 20 A | — |
| On-State Resistance (R<sub>DS(on)</sub>) | 22 mΩ (typical) | — |
| Power Dissipation (P<sub>D</sub>) | 60 W | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th)] | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| Lead Configuration | Wettable Flank | — |
| Automotive Qualification | AEC-Q101 | — |
| Technology | OptiMOS T2 | — |
| 工作溫度 | -55°C to +175°C | — |
| RoHS 狀態 | Compliant | — |
| Channel Count | 2 (dual independent) | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Mode | — | Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc) | — | 50 A |
| Maximum Drain Current (silicon-limited, 25 °C) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 5.5 mΩ |
| Gate Threshold VGS(th) | — | Logic Level (enhancement at ≤ 4.5 V VGS) |
| Power Dissipation (Tc) | — | 42 W |
| Thermal Resistance Junction-to-Case RthJC | — | 3.6 K/W |
| 工作溫度範圍 | — | -55 °C to +175 °C |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | — | MSL1 |
| Peak Reflow Temperature | — | 260 °C |
| Avalanche Rating | — | 100 % Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |