IPN70R1K4P7SATMA1 vs IPN80R4K5P7ATMA1 比較

詳細並排比較 IPN70R1K4P7SATMA1 由 Infineon 與 IPN80R4K5P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 ✓ 啟用中

規格比較

參數 IPN70R1K4P7SATMA1 IPN80R4K5P7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Series CoolMOS P7 —
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (V(BR)DSS) 700 V —
Continuous Drain Current (ID) at TC 4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance (RDS(on)) 1.4 ohm class (per '1K4' suffix) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Power Dissipation (PD) at TC 6.2 W —
Technology Superjunction (CoolMOS P7) CoolMOS Superjunction (SJ)
封裝 PG-SOT223 (3-pin + tab, surface mount) PG-SOT223 (surface mount, 3-pin + tab)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (TJ) —
Configuration Single with built-in diode —
腳位數 3 (Gate, Drain, Source) —
DPAK Footprint Compatible Yes (drop-in alternative to DPAK per datasheet) —
RoHS 狀態 Compliant Compliant
MSL 等級 1 (per JEDEC J-STD-020) —
Product Family — CoolMOS P7
FET Type — N-Channel
Drain-Source Voltage (VDS) — 800 V
Continuous Drain Current (ID, Tc) — 1.5 A
Power Dissipation (Pd, Tc) — 6 W
On-Resistance (RDS(on), VGS=10V) — 4.5 ohm max
Operating Mode — Enhancement-mode
Grade — Industrial
Application — Low-power SMPS, flyback converters, LED drivers
Reel / Tape Packaging — Tape & Reel (T/R)

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