IPT007N06NATMA1 vs BSS316NH6327XTSA1 比較
詳細並排比較 IPT007N06NATMA1 由 Infineon 與 BSS316NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPT007N06NATMA1 | BSS316NH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 2 (Trench) |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID, TC=25C) | 300 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Power Dissipation (PD, TC=25C) | 375 W | — |
| 工作溫度範圍 | -55 C to +175 C (TJ) | — |
| 封裝 | PG-HSOF-8-1 (TOLL) | PG-SOT23 (SOT-23-3) |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | Single N-channel | — |
| Gate Charge (QG) | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Thermal Resistance (RthJC max) | [DATA_NEEDED: RthJC] | — |
| MSL 等級 | MSL 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 無鹵素 | Yes | — |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID) at TA=25C | — | 1.4 A |
| Drain-Source On-Resistance RDS(on) max | — | 160 mOhm at VGS=10V, ID=1.4A |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V at ID=3.7 uA |
| Total Gate Charge (Qg) | — | 600 pC at VGS=5 V |
| Input Capacitance (Ciss) | — | 94 pF at VDS=15 V |
| Output Capacitance (Coss) | — | [DATA_NEEDED: output capacitance] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: reverse transfer capacitance] |
| Maximum Power Dissipation (PD) at TA=25C | — | 500 mW |
| 工作接面溫度範圍 | — | -55 C to +150 C |
| Lead Plating | — | Pb-free (Matte Tin) |
| Automotive Qualification | — | AEC-Q101 qualified |