IQD009N06NM5SCATMA1 vs IPC50N04S5L5R5ATMA1 比較
詳細並排比較 IQD009N06NM5SCATMA1 由 Infineon 與 IPC50N04S5L5R5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ 啟用中規格比較
| 參數 | IQD009N06NM5SCATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Series | OptiMOS 5 60V (IQD009N06NM5) | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID, Ta=25C) | 42 A | — |
| Pulsed Drain Current (IDM, Tc) | 445 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 0.9 mOhm | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | 42 W |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS abs max, typical +/-20V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| 封裝 | PG-WHSON-8-U02 (PQFN 5x6 mm) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | [DATA_NEEDED: Tj min/max] | -55 °C to +175 °C |
| RoHS 狀態 | Compliant | — |
| MSL 等級 | [DATA_NEEDED: MSL classification] | — |
| Tape and Reel Packaging | Yes (suffix SCATMA1) | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Mode | — | Enhancement Mode |
| Continuous Drain Current (ID, Tc) | — | 50 A |
| Maximum Drain Current (silicon-limited, 25 °C) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 5.5 mΩ |
| Gate Threshold VGS(th) | — | Logic Level (enhancement at ≤ 4.5 V VGS) |
| Thermal Resistance Junction-to-Case RthJC | — | 3.6 K/W |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | — | MSL1 |
| Peak Reflow Temperature | — | 260 °C |
| Avalanche Rating | — | 100 % Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |