IQE012N03LM5CGSCATMA1 vs IQE036N08NM6CGSCATMA1 比較
詳細並排比較 IQE012N03LM5CGSCATMA1 由 Infineon 與 IQE036N08NM6CGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQE012N03LM5CGSCATMA1 | IQE036N08NM6CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (trench MOSFET) | Trench MOSFET (OptiMOS 6) |
| Drain-Source Voltage (VDS) | 30 V | 80 V |
| Continuous Drain Current (ID) @ Ta | 34 A | — |
| Continuous Drain Current (ID) @ Tc | 224 A | — |
| Maximum RDS(on) @ VGS=10V | 1.15 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ, per Merlin listing) | — |
| 封裝 | PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作接面溫度 | -55 °C to +175 °C | — |
| MSL 等級 | 1 (per JEDEC J-STD-020, floor life unlimited) | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 6 |
| Part Status | — | Active |
| Continuous Drain Current (ID) at TA | — | 16.7 A |
| Continuous Drain Current (ID) at TC | — | 118 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 125 W |
| 封裝 / 外殼 | — | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) |
| Configuration | — | Source Down, Center Gate, Dual-Side Cooling |
| 工作溫度範圍 | — | -55 C to +150 C (junction, per datasheet derating curves) |
| Packing | — | Tape and Reel (suffix ATMA1) |
| Voltage Rating | — | 60 V to 100 V category (80 V nominal) |