IQE220N15NM5ATMA1 vs IQE065N10NM5CGSCATMA1 比較
詳細並排比較 IQE220N15NM5ATMA1 由 Infineon 與 IQE065N10NM5CGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQE220N15NM5ATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 150 V | — |
| Continuous Drain Current (ID) at Ta | 7 A | — |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| RDS(on) Max at VGS=10V | 22 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V (typ at 46 µA) | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | 14.4 nC at 10 V | — |
| Input Capacitance (Ciss) | 14 pF | — |
| Output Capacitance (Coss) | 340 pF | — |
| 輸出配置 | Single N-Channel | — |
| 封裝 | PG-TSON-8-5 (Source-Down) | PG-WHTFN-9-1 (Source-Down) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +150C (junction) | — |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 5 trench-gate |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | — |
| Series | — | OptiMOS 5 |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25 C | — | 85 A |
| Continuous Drain Current (ID) at TA | — | 13 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 6.5 mOhm |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 100 W |
| 工作溫度範圍 | — | -55 C to +150 C |
| Lead-Free | — | Yes |