IRF1010NPBF-VB vs IRF1407PBF 比較
詳細並排比較 IRF1010NPBF-VB 由 VBsemi Elec 與 IRF1407PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF1010NPBF-VB | IRF1407PBF |
|---|---|---|
| 品牌 | VBsemi Elec | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage VDSS | 55 V | — |
| Continuous Drain Current ID | 85 A (Tc) | — |
| Power Dissipation PD | 180 W (Tc) | — |
| On-Resistance RDS(on) | 0.014 Ohm (14 mOhm) | — |
| Total Gate Charge Qg | 80 nC | — |
| Gate-Source Voltage VGSS | +/-20 V | — |
| Operating Mode | Enhancement | — |
| Number of Channels | 1 | — |
| 封裝 | TO-220AB (Through Hole) | TO-220AB (through-hole, 3 leads) |
| 安裝類型 | Through Hole | Through Hole |
| Configuration | Single FET | — |
| Process Technology | Planar HEXFET, Advanced Process Technology | — |
| Recommended Switching Frequency | Below 100 kHz | — |
| Market Qualification | Industrial | — |
| RoHS 狀態 | Compliant (Pb-free suffix) | — |
| FET Type | — | N-Channel |
| Technology | — | HEXFET (stripe-planar MOSFET) |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 130 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC=25C | — | 330 W |
| On-Resistance RDS(on) at VGS=10V | — | 7.8 mOhm (typical) |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS threshold typical/min/max] |
| Gate Charge (Qg) | — | 160 nC (typical) |
| Maximum Junction Temperature | — | 175 C |
| 工作溫度範圍 | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Lead-free, RoHS compliant (PBF suffix) |
| Avalanche Rating | — | Repetitive avalanche rated |