IRF1407PBF vs IRFB4410PBF 比較

詳細並排比較 IRF1407PBF 由 Infineon 與 IRFB4410PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF1407PBF IRFB4410PBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Technology HEXFET (stripe-planar MOSFET) MOSFET (Metal Oxide) - HEXFET
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at TC=25C 130 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TC=25C 330 W —
On-Resistance RDS(on) at VGS=10V 7.8 mOhm (typical) —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS threshold typical/min/max] —
Gate Charge (Qg) 160 nC (typical) —
Maximum Junction Temperature 175 C —
工作溫度範圍 -55 C to +175 C -55C to +175C (Tj)
封裝 TO-220AB (through-hole, 3 leads) TO-220AB (through-hole)
安裝類型 Through Hole Through Hole
Lead-Free / RoHS Lead-free, RoHS compliant (PBF suffix) —
Avalanche Rating Repetitive avalanche rated —
Drain-to-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) @ 25C — 88 A (Tc)
Continuous Drain Current (Id) @ 100C — [DATA_NEEDED: Id @ 100C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: Idm pulse]
Gate-to-Source Voltage (Vgs) — [DATA_NEEDED: Vgs max]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
RDS(on) max @ VGS=10V — 10 mOhm
Total Gate Charge (Qg) — 120 nC
Power Dissipation (Pd) — 200 W (Tc)
Avalanche Energy Rating — Single-pulse avalanche rated
MSL 等級 — 1 (unlimited)
RoHS 狀態 — Compliant (Pb-free PBF suffix)
Series — HEXFET

資料表與資源

瀏覽所有產品 建立 BOM 索取報價