IRF520NPBF vs IRFR4615TRLPBF 比較
詳細並排比較 IRF520NPBF 由 Infineon 與 IRFR4615TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF520NPBF | IRFR4615TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | HEXFET | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (V_DSS) | 100 V | — |
| Continuous Drain Current (I_D) at Tc | 9.7 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-to-Source Voltage (V_GS) max | ±20 V | — |
| R_DS(on) max at V_GS=10V | 200 mOhm | — |
| Total Gate Charge (Q_g) | 16.7 nC | — |
| Power Dissipation (P_D) at Tc | 48 W | — |
| 工作溫度範圍 | -55C to +175C | -55C to +175C |
| 封裝 | TO-220AB (through-hole) | TO-252AA (DPAK) |
| 安裝類型 | Through Hole | Surface Mount |
| MSL 等級 | 1 (unlimited) | — |
| RoHS 狀態 | Compliant (Pb-free) | — |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Technology | HEXFET (vertical DMOS) | IR MOSFET (N-Channel Enhancement Mode) |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25C | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| On-Resistance RDS(on) max at VGS=10V | — | 42 mOhm |
| Total Gate Charge (Qg) | — | 26 nC |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Power Dissipation (PD) at TC=25C | — | 144 W |
| Avalanche Energy (EAS) | — | 109 mJ |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates Pb-free) |
| 單脈衝突崩能量 | — | 109 mJ |