IRF7832TRPBF vs BSS205NH6327XTSA1 比較
詳細並排比較 IRF7832TRPBF 由 Infineon 與 BSS205NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF7832TRPBF | BSS205NH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRF7832TRPBF | BSS205NH6327XTSA1 |
| FET Type | N-Channel | — |
| Technology | HEXFET (trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.0 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) typical | 1.0 V to 2.5 V | — |
| Total Gate Charge (Qg) typical | 34 nC | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| 工作溫度範圍 | -55 C to +150 C (TJ) | -55 °C to +150 °C (junction) |
| 封裝 | 8-SO (SOIC-8) | PG-SOT23 (SC-59, TO-236-3), 3-pin |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage V<sub>DS</sub> | — | 20 V |
| Continuous Drain Current I<sub>D</sub> (Ta) | — | 2.5 A |
| Power Dissipation P<sub>D</sub> (Ta) | — | 500 mW |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) | — | 85 mΩ |
| Gate Threshold V<sub>GS(th)</sub> | — | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Drive Voltage | — | Logic-level compatible |
| Qualification | — | AEC-Q101 |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020) |
| Packaging | — | Tape & Reel (H6327) |