IRFP2907PBF vs IRFP250MPBF 比較
詳細並排比較 IRFP2907PBF 由 Infineon 與 IRFP250MPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFP2907PBF | IRFP250MPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRFP2907PBF | IRFP250MPBF |
| Technology | HEXFET Stripe Planar DMOS (N-Channel) | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (V_DSS) | 75 V | — |
| Continuous Drain Current (I_D) at T_C = 25 C | 209 A | — |
| Static Drain-to-Source On-Resistance (R_DS(on)) | 4.5 mOhm at V_GS = 10 V | — |
| Power Dissipation (P_D) at T_C = 25 C | 470 W | — |
| Total Gate Charge (Q_g) | 410 nC | — |
| Maximum Junction Operating Temperature | +175 C | — |
| Package / Mounting Type | TO-247AC (Through Hole) | — |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| RoHS Compliance | Yes (Pb-free) | — |
| Avalanche Rated | Yes (repetitive avalanche rated) | Yes |
| Body Diode | Integral (no external anti-parallel diode required) | — |
| Lead-Free | Yes | Yes |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 200 V |
| Continuous Drain Current (Id) at Tc=25C | — | 30 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current value] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 75 mOhm max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 4 V (typ) |
| Total Gate Charge (Qg) | — | 82 nC |
| Power Dissipation (Pd) at Tc=25C | — | 214 W |
| 工作接面溫度 | — | -55C to +175C |
| 封裝 / 外殼 | — | TO-247AC (3-pin + tab) |
| 安裝類型 | — | Through Hole |
| 腳位數 | — | 3 |
| RoHS 狀態 | — | Compliant |
| MSL 等級 | — | 1 (unlimited) |